From September 29 to October 4, 2019, ICSCRM 2019 (The International Conference on Silicon Carbide and Related Materials) was held in Kyoto International Convention Center, Japan, attracting more than 80 well-known semiconductor industry enterprises , experts and scholars to attend the conference. GPT showed a series of silicon carbide power devices at ICSCRM booth A7 .

　　CSCRM is one of the most important conferences on silicon carbide power electronic component technology and related material technology in the world, and an important forum for technical discussions in all silicon carbide and other wide band gap (WBG) semiconductor fields. Forum topics include silicon carbide single crystal growth, epitaxial growth, basic physical properties, defect characterization and engineering, quantum technology, surface and interface, device manufacturing process, device (high power, high temperature, RF power, radiation-hardening devices, etc.), packaging, modularization and circuit technology, and system applications for SiC and related materials such as group III nitrides, oxides, diamonds and other WBGs.

　　ICSCRM 2019 has nearly 100 booths, showing the industry's most advanced substrate materials, equipment, chips, power devices and related technologies, products and solutions. As one of the most important conferences on silicon carbide power electronic component technology and related material technology in the world, ICSCRM 2019 also held a lot of international seminars, power electronics application technology forums and other activities, and keep up with industry trends, reported and discussed the scientific and technological development status in the field of WBG semiconductors, and analyzed the future development trend in detail.

　　Global Power Technology Semiconductor Appeared at ICSCRM 2019

　　At this exhibition, GPT brought its self-developed 600-3300V (2A-100A) Schottky diode, silicon carbide half-bridge hybrid module, SICMOSFET and a series of silicon carbide power device products to participate in the exhibition, which aroused the attention and heated discussion of many visitors. the exhibition area has an endless flow of customers, and products have become the focus of attention, which has been recognized and affirmed by the industry, and has also won the high attention of domestic and foreign industrial chain peers, strengthening multi-directional communication and cooperation.

　　During the conference, new technologies and new products in the industry were showed, which will greatly promote the development of the industry. As a leading semiconductor enterprise in China, GPT fully demonstrated China's domestic leading level of silicon carbide power device research and development technology and achievements at this ICSCRM.

　　In the future, GPT will continue to accelerate the pace of product innovation, make the development of silicon carbide power device products more perfect, and also expect to work with upstream and downstream partners in the industry to promote the development of the domestic third-generation semiconductor industry.

　　Notes:

　　■ Sample application: GPT provides you with various samples and support, you can apply in the following ways:

　　• Send your name, company name, phone number and other information to: market@globalpowertech.cn

　　• Call 010-82156177

　　■ Please visit the official website of GPT for more information:

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