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    2022-11-11

2020 China Wide Bandgap Power Semiconductor Technology Forum and Industry Development Summit Held in Jiaxing, Global Power Technology Exhibited 650V DFN5*6 Ultra-thin Silicon Carbide Device New Produc

  On November 6, with the theme of "New Infrastructure, Chip ideas", the 2020 China Wide Bandgap Power Semiconductor Technology Forum and Industry Development Summit was held in South Lake Industrial New City of Jiaxing. Under the guidance of Jiaxing Municipal People's Government, this forum is jointly organized by China Wide Bandgap Power Semiconductor Application Association, Jiaxing Nanhu District People's Government, Huaxia Happiness Foundation Co. Ltd. and National Integrated Circuit Industry Investment Fund Co., Ltd.

  The heads of relevant departments from the province, city and district, the directors and members of the Union from all over the country, experts and scholars from universities and research institutes, financial experts in the investment field and other guests gathered in Jiaxing. Global Power Technology (GPT in short) also attended to discuss the development of wide bandgap power semiconductor industry, industry chain construction, industrial process etc., and was invited to show the company's products.

  At the forum, experts and industry professionals conducted several thematic technical reports about the technology and application of wide bandgap semiconductors, shared the latest technological advances and development prospects of the industry, had an in-depth discussion based on the cooperation and development of China wide bandgap semiconductor industry, and put forward many targeted advice and suggestions. The meeting also released the “wide bandgap power semiconductor" fourteen five "proposal”.

  China Wide Bandgap Power Semiconductor and Application Industry Association was established in Jinan in December 2013 under the guidance of the Department of Electronic Information of the Ministry of Industry and Information Technology.

  As the world's first wide bandgap semiconductor industry association, it plays an important role in China's wide bandgap power semiconductor industry policy support and industrial development promotion, it fully support the national wide bandgap power semiconductor technology and top-level design of industry development, and actively explore the technology and industry development direction, standards development, cooperation and other aspects, so it has a very important influence in the industry.

  Based on the research of silicon carbide power semiconductors, GPT has made outstanding achievements in both theory and practice, and has made outstanding contributions on the China silicon carbide semiconductors. At the same time, as a member of "China Wide Bandgap Association", GPT has always supported the association development and promoted the professional capacity of the association.

  With the 2020 China Wide Bandgap Power Semiconductor Technology Forum and Industry Development Summit, GPT will also play a greater role in promoting the development of China's wide bandgap power semiconductor and application industry, and continuously enhance its competitiveness.