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    2022-12-27

2019 China Wide Band Gap Power Semiconductor and Application Industry Summit Was Held at Hefei , The Chief Engineer of Global Power Technology Power Business Unit Was Hired As An Expert of The Associa

  On October 25th, with the theme of "Integration of industry and finance to climb the peak together", the 2019 China Wide Band Gap Power Semiconductor and Application Industry Summit was held in Hefei Shushan District Economic and Technological Development Zone. The conference was jointly sponsored by China Wide Band Gap Power Semiconductor and Application Industry Association, National Integrated Circuit Industry Investment Fund, Anhui Provincial Economic and Information Department and Hefei Municipal Government, and hosted by Hefei Investment Promotion Bureau, Industrial Investment Group and Economic Development Zone.

  Heads of relevant departments from the Ministry of Industry and Information Technology of the People's Republic of China, the Energy Administration, provincial and municipal departments, professors, experts, and enterprise leaders attended the summit. Expert group of GPT also attended and joined the discussion about the development of wide band gap power semiconductor industry, industrial chain construction, industrial technology, etc.

  At the summit, Professor Guo Yue, Professor Zheng Youliao, Professor Sima Dimitrijev and other experts conducted technical reports on the technology and application of wide band gap semiconductors, shared industrial latest technological progress and prospects, which will further promote the coordinated development of upstream and downstream, and accelerate the construction and upgrading of the industrial chain.

  China Wide Band gap Power Semiconductor and Application Industry Association was established in Jinan in December 2013 under the guidance of the Department of Electronic Information of the Ministry of Industry and Information Technology. As the world's first wide band gap semiconductor industry association, it plays an important role in China's wide band gap power semiconductor industry policy support and industrial development promotion, it fully support the national wide band gap power semiconductor technology and top-level design of industry development, and actively explore the technology and industry development direction, standards development, cooperation and other aspects, so it has a very important influence in the industry.

  After the summit, based on the research of GPT in wide band gap power semiconductors and its outstanding contributions to the industry, the chief engineer of GPT Power Business Unit was appointed as a member of the "China Wide Union" expert group by the resolution of the "China Wide Union" Council.

  Based on the research of silicon carbide power semiconductors, GPT has made outstanding achievements in theory and practice in recent years and contributed to China's silicon carbide industry. At the same time, as a member of the "China Wide Association", GPT has always strongly supported the development of the association and promoted the professional ability of the association. With the 2019 China Wide Band Gap Power Semiconductor and Application Industry Summit, GPT will also play a greater role in promoting the development of China's wide band gap power semiconductor and application industry and enhancing its own competitiveness.